MF067200 - SEMI MF672 - Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe StdPbc-1016 SEMI E10-0422 (technical revision)

SEMI E10-0422 (technical revision)

This Specification does NOT address the marking techniques that may be employed when complying with this Standard

D32で規定されたベア・ガラスIDの位置の規定は一箇所であり，大型化に伴い運用効率上複数の基板IDが必要である。そのため，D32を基本として効率的な運用を行える基板ID位置を規定するものである。

SEMI D9-0303 (Reapproved 0515)

previously published November 2009

MF067200 - SEMI MF672 - Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe StdPbc-1016 SEMI E10-0422 (technical revision)This Guide covers procedures for measurement of the resistivity profile perpendicular to the surface of a silicon wafer of known orientation and type in any resistivity range for which there exist suitable standards. Polished, lapped, or ground surfaces may be used. The procedures of this Guide can be used to profile through p n junctions. The procedures of this Guide may be used on epitaxial films, substrates, diffused layers, or ion implanted