M06600 - SEMI M66 - Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique Revision:SEMI M66-0706E - Superseded 6-0703 (first published)

6-0703 (first published)

本書では，ステンレス鋼表面のクロム富化した不動態酸化層の成分と厚さを特定し，配管，継ぎ手，バルブ，その他の部品の表面汚染を検出するためのテスト方法について記述する。この手順には，オージェ電子分光法（AES）による表面元素成分の検出と測定が関わる。この手順では，受け入れたままの表面から酸化膜層を貫通しベース金属にまで到る，クロム，鉄，ニッケル，酸素，炭素の深さ方向の成分プロファイルを求める方法についても記述する。本測定方法により，酸化層の厚さおよび不動態化処理された領域全体のクロム富化に関する情報が得られる。

SEMI E40-0709 (technical revision)

The test procedures that measure these characteristics are intended to be performed sequentially

certain individual impurity species sometimes can be identified under very restricted conditions

M06600 - SEMI M66 - Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique Revision:SEMI M66-0706E - Superseded 6-0703 (first published)Continued scaling of CMOS integrated circuit dimensions is reaching a point where materials changes as well as lithographic advances are required to meet the projections of Moores Law and the International Technology Roadmap for Semiconductors. As gate dielectric thickness approaches 1 nm, both the gate dielectric and electrode materials that have been in common usageSiO2, and doped polysiliconare displaying characteristics that are unacceptable for